摘要
影响GaN基LED的外量子效率低下的主要因素是光子在半导体和空气界面处的全反射。根据实际芯片建立LED模型,利用蒙特卡罗方法进行光线追迹模拟,分析了光子的主要损耗对出光效率的影响。计算不同的表面粗化微元,微元尺寸及微元底角对LED光提取效率的影响;比较不同微元形成的光场分布。模拟显示:所设计最佳的表面粗化结构在理想状况下可以提高光提取效率3倍以上。
The external quantum efficiency of most conventional LEDs is limited by the total internal reflection of the generated light, which occurs at the semiconductor-air interface. A LED model is established according to the actual chip and main mechanisms of wastage of the photons are analyzed. The simulation takes Monte Carlo ray tracing as a basal method. Models with different kinds of tiles, size of tiles and bottom angle of tiles are simulated to get the optimal structure and distribution of the optical fields. The photon extraction efficiency of the optimally roughened surface LED shows a threefold increase compare to that of traditional one.
出处
《电子器件》
CAS
2008年第4期1077-1080,共4页
Chinese Journal of Electron Devices
基金
国家自然科学基金资助(60276029)
国家863计划资助(2004AA311020
2006AA032409)
福建省科技项目和基金资助(2006H0092
A0210006
2005HZ1018)
关键词
GAN基发光二极管
光提取效率
表面粗化
光场
蒙特卡罗
GaN-based light-emitting diode
photon extraction efficiency
surface roughening
Optical field
Monte carol.
