多晶硅薄膜晶体管泄漏电流建模

Modeling of Leakage Current in Polycrystalline Silicon Transistor

泄漏电流是多晶硅薄膜晶体管应用的一个主要问题,多晶硅薄膜晶体管泄漏电流的建模对集成多晶硅薄膜晶体管设计和工艺改进具有重要意义。本文以陷阱辅助热电子场致发射理论为基础,通过对物理模型的近似处理,提出了一个在大的栅压范围和温度范围内与实验数据吻合较好的多晶硅薄膜晶体管泄漏电流解析模型。模型适合于电路仿真器。

Leakage current is a main problem for the application of polycrystalline silicon transistor（p-Si TFT）,the modeling of leakage current in p-Si TFT is important for designers. Based on thermionic field emission, this paper presents an analytical model by approximating the physical model which shows good agreement with experimental data over a wide range of gate bias and of temperature. The model is suitable for implementation in a circuit simulator.