大功率InGaAsP/GaAs量子阱半导体激光器的直流和1/f噪声性质

Direct Current and 1/f Noise Characteristics of InGaAsP/GaAs High Power Quantum Well Laser Diodes

对大功率InGaAsP/GaAs量子阱(QW)半导体激光器(LD)的直流(DC)特性和小注入下的低频噪声(LFN)特性进行了实验研究.DC检测发现,V-I和IdV/dI-I可以对LD的电流泄漏作出判断.LFN检测发现,小注入下的1/f低频电压噪声幅值BV(I)∝IβV.理论分析和老化实验均表明,电流指数βV与载流子输运和电流泄漏机制之间有很好的相关性,存在电流泄漏和无辐射复合的器件其βV较小,可靠性较差.

The direct current （DC） and 1/f noise property at low bias current and low frequency were investigated on the high power InGaAsP/GaAs quantum well （QW） laser diodes. By using DC test, we found that V-I and IdV/dI-I are indicators of current leakage. By using low frequency noise （LFN） test, we found that voltage noise amplitude BV ∝I^βV. Theoretical analysis and aging tests indicate that current index βV is correlated with the carrier transport and current leakage mechanisms. The small βV indicates that the lasers are unreliability devices with serious current leakage and non-radiative recombination.