摘要
金刚石是非常重要的宽禁带半导体材料,n-型氧化锌与p-型金刚石的结合成为半导体研究的热点。该研究实现了金刚石薄膜上生长六角纤锌矿结构氧化锌(ZnO)微米/纳米结构。生长初期或ZnO饱和蒸气压较低时,ZnO晶粒多沉积在金刚石薄膜的晶界和棱边处,随着沉积时间的增加或反应气氛中气态ZnO浓度的增加,会有大量微米/纳米结构的ZnO生成,并覆盖整个金刚石薄膜表面。对ZnO在金刚石薄膜表面生长机制及反应气氛对金刚石的钝化作用进行了分析。
Diamond is an important material of width forbidden semiconductor. The combination of n-type zinc oxide with p-type diamond has become a hotspot of semiconductor research. The research in this paper realized zinc oxide （ZnO）micron / nanometer structure of hexagonal wurtzite growing on diamond film. At the initial stage or when the ZnO saturation steam pressure is lower, the grain of ZnO crystal mostly deposit on the crystal boundary and edge, with the increasing of deposition time and gaseous ZnO concentration in reaction atmosphere, a large quantity of ZnO with micron/ nanometer structure grow, covering whole surface of diamond. The mechanism of ZnO growing on the surface of diamond film and the passivation effect of reaction atmosphere on diamond was analyzed in the paper.
出处
《超硬材料工程》
CAS
2008年第1期8-10,共3页
Superhard Material Engineering
基金
新世纪优秀人才支持计划资助(NCET)
