摘要
In the framework of the effective mass theory, this paper calculates the electron energy levels of an InAs/GaAs tyre-shape quantum ring （TSQR） by using the plane wave basis. The results show that the electron energy levels axe sensitively dependent on the TSQR＇s section thickness d, and insensitively dependent on TSQR＇s section inner radius R1 and TSQR＇s inner radius R2. The model and results provide useful information for the design and fabrication of InAs/GaAs TSQRs.
In the framework of the effective mass theory, this paper calculates the electron energy levels of an InAs/GaAs tyre-shape quantum ring （TSQR） by using the plane wave basis. The results show that the electron energy levels axe sensitively dependent on the TSQR＇s section thickness d, and insensitively dependent on TSQR＇s section inner radius R1 and TSQR＇s inner radius R2. The model and results provide useful information for the design and fabrication of InAs/GaAs TSQRs.
基金
Project supported by the National Natural Science Foundation of China (Grant No 60521001)
