温度梯度法生长BaY2F8晶体

GROWTH OF BaY_2F_8 CRYSTAL BY TEMPERATURE GRADIENT TECHNIQUE

应用温度梯度法生长了BaY2F8单晶。实验表明:温度梯度、降温速率、坩埚形状和尺寸是影响BaY2F8晶体生长的重要因素。温度梯度为6℃/mm,降温速率小于6℃/h,用相对较小的坩埚圆锥角度,可以获得质量较好的BaY2F8单晶体。X射线定向分析表明:温度梯度法生长的BaY2F8晶体的生长轴平行于[001]方向。结合晶体结构图分析,可认为晶体的[001]方向为结构的强键延展方向,是晶体生长的优势方向。

BaY2F8 single crystal was grown by the temperature gradient technique. The experimental results indicate that the temperature gradient, the speed of cooling and the shape and size of the crucible are important factors influencing the growth of BaY2F8 crystal. When the temperature gradient was 6 ℃/mm and the speed of cooling was lower than 6 ℃/h, the quality of the BaY2F8 single crystal grownusing a smaller taper angle of crucible is better. The growth axis of BaY2F8 single crystal is parallel with the [001] direction. The [001 ] direction is the strong band direction and is therefore the dominating direction for the crystal growth according to the structure characteristics of BaY2F8 crystal.