摘要
基于主方程法,把单电子晶体管的稳定状态数简化为3个状态,得到了一个简捷模拟新方法,通过仿真与分析,这种新模拟方法模拟单电子晶体管I-V特性,具有合理的精确度,可用来分析SET—CMOS混合电路,这对数字逻辑电路的构造分析具有十分重要的意义。
Basing on the master equation method of single electron transistors,if the steady states of SET as three states is simplified and proposed a new simple simulation for SET.This new method for SET is reasonably precise by simulation and analysis,also can use this method to analyse SET-CMOS circuit.It is very important for designing digital logical circuit.
出处
《科学技术与工程》
2008年第16期4664-4666,共3页
Science Technology and Engineering
关键词
单电子晶体管
主方程法
伏安特性
single electron transistor（SET）master equation method V-I character
