摘要
硅纳米线是一种具有优异的物理、化学及力学性能的半导体材料,其独特的光致发光性能使硅纳米线有望在低维纳米材料发展的基础上实现硅基纳米结构的光集成电路。文中重点介绍了硅纳米线光致发光特性的研究现状及其发光机制的理论研究,最后对硅纳米线的应用前景加以展望。
As a sort of semi-conductive materials, silicon nanowires (SiNWs) possess excellent physical, chemical and mechanical properties. With the development of low-dimensional nanomaterials, integrated optical circuit based on silicon could be possibly realized depending on the unique photoluminescence (PL) performance of SiNWs. The current research situation and theoretical investigation upon the PL property of SiNWs were mainly introduced in this letter. At last their promising application prospects were discussed.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2008年第4期901-907,共7页
Journal of Synthetic Crystals
基金
国家高等学校博士点基金(No.20040532014)
教育部新世纪优秀人才基金(No.NCET-04-0773)资助项目
关键词
硅纳米线
光致发光
量子限制效应
发光机制
silicon nanowires
photoluminescence
quantum confinement
luminous mechanism