B掺杂对平面结构MOCVD-ZnO薄膜性能的影响(英文)

Effect of Boron-doping on Plane Zinc Oxide Thin Films Grown by Metal Organic Chemical Vapor Deposition

本文研究了B2H6掺杂流量（B掺杂）对平面结构MOCVD—ZnO薄膜的微观结构和光电性能影响。XRD、SEM和AFM测试的研究结果表明，玻璃衬底上制备的ZnO薄膜具有（002）峰择优取向的平面结构，B掺杂使薄膜的球状晶粒尺寸变小，10sccm流量时晶粒尺寸为-15nm。ZnO：B薄膜的最小电阻率为5．7× 10^-3 Ω · cm。生长的ZnO薄膜（厚度d=1150nm）在400-900nm范围的透过率为82％-97％，且随着BzH6掺杂流量增大，光学吸收边呈现蓝移（即光学带隙t展宽）现象。

Transparent conductive boron-doped zinc oxide （ZnO：B） films with plane surface have been deposited on glass substrates by metal organic chemical vapor deposition, using diethylzinc （DEZn） and water as reactant the gases and diborane （BE H6 ） as the n-type dopant gas. The structural, electrical and optical properties of films grown at 403 K were investigated as a function of BEH6 flow rates （0 - 10 sccm）. X-ray diffraction spectra （XRD） and scanning electron microscopy （SEM） images indicated these films oriented in the [002 ] crystallographic direction are with regular and uniformly smooth surfaces and the grain size of the films are smaller （ - 15 nm at 10 sccm） that of the undoped sample. Atomic force microscopy （AFM） also revealed that the ZnO ：B film （at 10 sccm） was nanostructured and with a surface roughness of - 5 nm. The lowest resistivity for the ZnO：B films was about 5.7 × 10^-3 Ω · cm. These as-grown ZnO films at different BEH6 flow rates exhibited a high transmittance （ - 82% -97% ） in the range of 400-900 nm with a thickness of -1150 nm. The optical absorption edge was shown to shift to higher photon energy with increasing electron concentration, following the Bumstein-Moss law.