高能辐射室温探测器用TlBr单晶及其器件

TlBr Single Crystal and Its Devices Used in High-energy Radiation Room-temperature Detectors

TlBr单晶材料具有探测器高的阻止本领、宽禁带、高电阻率、高密度、能量吸收深度较小等特点,是目前理想的高能X和γ射线探测用半导体材料之一。介绍了TlBr单晶材料、TlBr探测器的基本原理以及TlBr单晶及器件的研究现状,概括了TlBr原料提纯和晶体生长的主要方法及其特点,同时总结归纳出TlBr晶体生长和器件制备方面所存在的高质量材料制备问题、电极接触问题、器件结构设计问题和载流子收集问题,以及将来TlBr探测器领域的热点研究方向。

Due to its high stopping power, wide ban＆gap, high resistivity, high density and small energy absorption depth, TlBr single crystal is one of the perfect semiconductor materials used in high-energy X-and gamma rays radiation detectors. In this paper the TlBr single crystal materials, the principle of TlBr detectors and the research progresses in TlBr single crystals and devices are introduced. The main methods and characteristics in the process of TlBr starting material purification and crystal growth are summarized. The problems in the process of TlBr crystal growth and devices production are classified into high-quality materials preparation problem, electrode contacting problem, device structure design problem and charge carriers collection problem, and the future developments in the field of TlBr detectors are discussed.