摘要
Thin silicon phthalocyanine dichloride films on HOPG were prepared and the sample was heated in the vacuum with laser. The thickness of the thin sample on HOPG was checked by X-ray photoemission spectroscopy. The orientation of the molecules in respect to the substrate plane was investigated by measuring the silicon K-edge near edge X-ray absorption fine structure （NEXAFS）. In the NEXAFS spectra of the thin sample, two clear peaks which were assigned to Is → σ^＊Si-N and 1s→ σ^＊Si-Cl appeared around 1847.2 eV and 1843.1 eV respectively. The intensities of the resonance peaks showed strong polarization dependence. A quantitative analysis of the polarization dependence revealed that the Si-N bond tended to lie down while the Si-Cl bond was out of the molecular plane.
Thin silicon phthalocyanine dichloride films on HOPG were prepared and the sample was heated in the vacuum with laser. The thickness of the thin sample on HOPG was checked by X-ray photoemission spectroscopy. The orientation of the molecules in respect to the substrate plane was investigated by measuring the silicon K-edge near edge X-ray absorption fine structure （NEXAFS）. In the NEXAFS spectra of the thin sample, two clear peaks which were assigned to Is → σ^＊Si-N and 1s→ σ^＊Si-Cl appeared around 1847.2 eV and 1843.1 eV respectively. The intensities of the resonance peaks showed strong polarization dependence. A quantitative analysis of the polarization dependence revealed that the Si-N bond tended to lie down while the Si-Cl bond was out of the molecular plane.
基金
Nuclear Researchers Exchange Program 2005
Photon Factory Program Advisory Committee (2004G340)
