摘要
本文证明:(1)对任何形式的、连续的、a-Si隙态密度分布函数,只要我们利用Riemann-Stieltjes积分中值定理,势垒区的泊松方程都可以解析求解.(2)M/a-Si势垒区泊松方程的抛物函数解,是由假定空间电荷区自由载流子耗尽带来的.
In this paper we have proved:(1) For the arbitrary continuous gap state density distribution of a-Si,the Poisson's Equation in the Space charge region is always solvable analytically, if we have adopted the mean-value theorem for Riemann-Stieltjes integral, (R-S inegral).(2) The parabolie funection solution of Poisson's equation in M/a-Si barrier region comes the deplection approxition on the space charge region.
出处
《湖南大学学报》
EI
CAS
CSCD
1990年第3期73-80,共8页
关键词
半导体
非晶硅
势垒区
泊松方程
Amorphous Semiconductor
Space Charge
Poisson's equation/amorphous silicon