摘要
本文介绍了基于ARM920T内核的嵌入式系统中闪存芯片的选择,比较了NOR型和NAND型2种闪存芯片之间的差别。以三星公司的CPU芯片S3C2410X和英特尔公司的NOR型闪存芯片E28F128J3为例,详细分析了两者之间接口电路的设计和通信过程,从而提供了一种简便而高效的FLASH接口设计方法。
This paper introduced the selection of flash memory in the design of embedded system based on ARM920T kernel, and compared the difference between NOR flash and NAND flash. This paper put emphasis upon the design of the interface and communication between CPU COMS chip （S3C2410X of SAMSUNG） and its external flash memory （E28F128J3 of INTEL）. Then a simple and high-efficiency method of flash memory interface was offered.
出处
《国外电子测量技术》
2008年第8期50-53,共4页
Foreign Electronic Measurement Technology
关键词
嵌入式系统
闪存设备管理
ARM
embedded system
flash memory device management
ARM
