大面积Bi单晶纳米线阵列的制备

Preparation of Large Area Single Crystal Bismuth Nanowire Arrays

在有序的氧化铝模板(AAO)的孔洞中,采用电化学沉积工艺成功地制备了准金属Bi纳米线有序阵列.使用X射线衍射仪(XRD)、场发射扫描电子显微镜(FE-SEM)、透射电子显微镜(TEM)及高分辨电子显微镜(HRTEM)对样品的结构和形貌进行了表征.XRD结果表明,所制备的铋样品为六方相,且沿[110]方向有很好的生长取向;FE-SEM图片清晰地说明铋纳米线阵列是大面积、填充率高和高度有序的;TEM的结果显示纳米线直径均匀、表面光滑且长径比大;HRTEM图片中清晰的晶格条纹和选区电子衍射(SAED)结果表明纳米线是单晶.

The ordered nanowire arrays of semi-metal bismuth were successfully prepared by electrodeposition into the pores of anodic alumina membrane（AAO）. The structure and morphologies of the as-prepared sample were characterized by X-ray diffraction（XRD）, field emission scanning electron microscopy （FE-SEM）, and transmission electron microscopy（TEM）. XRD result indicates that the as-prepared sample is bismuth with a hexagonal structure, and has a preferential growth direction along the [ 110] direction. The FE-SEM photos clearly show that the bismuth nanowire arrays are large-area, high-filling and highly ordered. TEM results in- dicate that the diameter of nanowires is uniform, the surface of nanowires is smooth, and the ratio of nanowires is high. The clear lattice stripes and bright selected electron diffraction spots of HRTEM photo demonstrate single crystal nature of the as-prepared sample.