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基于Zn(Q-Ph)_2与DCJTB非掺杂型OLED的制备及其电致发光性能研究 被引量:3

Preparation and Electroluminescence Property of a Non-doping OLED Based on Zn(Q-Ph)_2 and DCJTB
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摘要 合成了有机发光材料2-苯基-8-羟基喹啉锌Zn(Q—Ph)2,通过^1H NMR,UV—Vis及MS等手段对配合物进行了结构表征.利用该材料与高效的红光染料DCJTB复合制备出全新结构的非掺杂型OLED器件,其结构为ITO/NPB/DCJTB/Zn(Q—Ph)2/AlQ3/Al.将DCJTB超薄层的厚度调节到0~2.0nm范围内,OLED器件的发光色调经历了黄光、红光和橙光的转变,并且探讨了DCJTB厚度对OLED发光机理以及发光复合区域的影响.当DCJTB的厚度为0.5nm时,获得了稳定的红光发射,该器件在5.5V电压下启亮,在25V外加电压下发光亮度达到420cd/m^2,对应的电流密度为250mA/cm^2。 As electroluminescent material zinc his (2-phenyl-8-hydroxyquinolato) [ Zn (Q-Ph) 2 ] was synthesized and characterized by ^1H NMR, UV-Vis and MS measurements. DCJTB [ 4-(dicyanomethylene)-24- butyl-6 (1,1,7,7-tetramethyljulolldyl-9-enyl) 4H-pyran ], a highly efficient fluorescent dye, and Zn (Q-Ph) 2 were used to fabricate a kind of novel non-doping organic light-emitting diode with a structure of ITO/NPB { N, N'-Di [ ( 1 -naphthalenyl ) -N, N'-diphenyl ] - ( 1, 1 '-biphenyl ) -4, 4'-diamine }/DCJTB/Zn ( Q-Ph ) 2/AlQ3 (8-hydroxyquinoline aluminum)/Al. By changing the thickness of ultra-thin layer DCJTB, yellow-light, redlight and orange-light emission from OLEDs were studied. Their luminescent color, electroluminescent mechanism and recombination zone were optimized in this paper, when a 0. 5 nm ,thick DCJTB was used, a stable red emission was obtained. With a lower turn-on voltage at about 5.5 V, the non-doping OLED showed a maximum brightness of 420 cd/m^2 and current density of 250 mA/cm^2 at 25 V.
出处 《高等学校化学学报》 SCIE EI CAS CSCD 北大核心 2008年第8期1598-1602,共5页 Chemical Journal of Chinese Universities
基金 国家自然科学基金(批准号:20575021)资助
关键词 有机电致发光器件 非掺杂型 复合位置 DCJTB Organic light-emitting diode Non-doping Recombination zone DCJTB
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参考文献15

  • 1Tang C. W., van Slyke S. A.. Appl. Phys. Lett. [J].1987, 51(12) : 913-915
  • 2Tang C. W. , van Slyke S. A. , Chen C. H.. J. Appl. Phys.[J]. 1989, 65(9) : 3610-3616
  • 3谢伟杰,李昱鹏,孙成林,李峰,费腾,马於光.利用激基复合物发光的有机白光器件制备[J].高等学校化学学报,2007,28(7):1342-1344. 被引量:5
  • 4王志强,刘红梅,郑才俊,万婧,彭北快,张晓宏.有机小分子电致发光器件的蓝光主体材料的合成与表征[J].高等学校化学学报,2007,28(11):2099-2101. 被引量:2
  • 5Chen C. H. , Tang C. W. , Shi J. , et al.. Thin Solid Films[J]. 2000, 363:327-331
  • 6Liu T. H. , Iou C. Y. , Wen S. W. , et al.. Thin Solid Films[J]. 2003, 441:223-227
  • 7Hamada Y., Kanno H., Tsujioka T., et al.. Appl. Phys. Lett.[J]. 1999, 75(12) : 1682-1684
  • 8Kido J., Hayase H., Hongawa K., et al.. Appl. Phys. Lett. [J].1994, 65(17) : 2124-2126
  • 9Campos R. A. , Kovalev I. P. , Guo Y. , et al.. J. Appl. Phys.[J]. 1996, 80(12) : 7144-7150
  • 10Wang Y. M. , Teng F. , Xu Z. , et al. Mater. Chem. Phys. [J] , 2005, 92:291-294

二级参考文献29

  • 1许海,杨兵,何凤,解增旗,田雷蕾,刘晓冬,于景生,马於光.联苯桥联的PPV齐聚物基态构型、电子能级和吸收光谱的理论研究[J].高等学校化学学报,2006,27(3):510-514. 被引量:9
  • 2Strukeji M.,Jordan R.H.,Dodabalapur A..J.Am.Chem.Soc.[J],1996,118:1213-1214
  • 3Zhang Z.L.,Jiang X.Y.,Zhu W.Q.,et al..J.Phys.D:Appl.Phys.[J],2001,34:3083-3087
  • 4Deshpande R.S.,Bulovi V.,Forrest S.R..Appl.Phys.Lett.[J],1999,75:888-890
  • 5Li G.,Shinar J..Appl.Phys.Lett.[J],2003,83:5359-5361
  • 6Ko C.W.,Tao Y.T..Appl.Phys.Lett.[J],2001,79:4234-4236
  • 7Tokito S.,Iijima T.,Tsuzuki T..Appl.Phys.Lett.[J],2003,83:2459-2461
  • 8Yang K.,Gao W.,Zhao J.,et al..Synth.Met.[J],2002,132:43-47
  • 9Cheng G.,Zhao Y.,Li F.,et al..Thin Solid Films[J],2004,467:231-233
  • 10Zhang Y.,Cheng G.,Zhao Y.,et al..Appl.Phys.Lett.[J],2005,86:01112-1-01112-3

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  • 1周欣,潘清江,李明霞,张红星,唐敖庆.三联吡啶Pt(Ⅱ)配合物的基态和激发态的理论研究[J].高等学校化学学报,2007,28(5):900-903. 被引量:2
  • 2侯军,周子彦,吴学,朱东霞,李鹏.新型卟啉化合物的合成及性质[J].高等学校化学学报,2007,28(8):1424-1427. 被引量:2
  • 3Tang C. W., van SlykeS. A.. Appl. Phys. Lett.[J], 1987, 51(12): 913-915.
  • 4BurroughesJ. H., BradlyD. D. C., BrownA. R., MarksR. N., MackayK., FrlendR. H., BurnP. L., HolmesA. B.. Nature [J], 1990, 347:539-541.
  • 5JiaoS. B., LiaoY., XuJ. X., WangL. P., YuG., WangL. M., SuZ. M.. Adv. Funct. Mater. [J], 2008, 18(16): 2335- 2347.
  • 6MADong.Ge(马东阁).2009年全国高分子学术论文报告会[R],Tianjin,2009.
  • 7D'AndradeB. W., ForrestS. R.. Adv. Mater.[J],2004, 16(8): 1585-1595.
  • 8HsiaoC. H., LanY. H., LiuS. W., WeiM. K., ChenC. T., LeungM. K., ChiuT. L., LeeT. L.. Curr. Appl. Phys.[J], 2011, 11(4): S183-S185.
  • 9Kido J. , Hongawa K. , Okuyama K. , Nagai K.. Appl. Phys. Lett. [J], 1994, 64:815-816.
  • 10Gather M. C. , Khnen A. , Meerholz K.. Adv. Mater. [J], 2011,23(2) : 233-248.

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