摘要
提出了一种描述激光二极管阵列(Laser Diode Array,LDA)双峰远场结构的光场新模型,该模型同时考虑了激光二极管阵列垂直于结平面大发散角的传输特性,基于亥姆霍兹方程的远场解,运用非傍轴光传输理论分析,得到描述激光二极管阵列远场光分布模型,其结果与实验测量结果吻合较好.
A diode array solution of laser diode new model for describing the far field with the double peak structure of a high-power laser (LDA) is proposed. The propagation properties are studied by the off-axis theory. The far-field the Helmholtz equation is obtained by use of the boundary condition at the output plane of the array. The computed results agree well with the measured far-field data of practical devices.
出处
《光子学报》
EI
CAS
CSCD
北大核心
2008年第8期1503-1506,共4页
Acta Photonica Sinica
基金
国家自然科学基金(6027704)资助