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电子双势垒量子隧穿的散射矩阵方法及其数值模拟 被引量:3

Scattering matrix method and numerical simulation for electronic quantum tunneling a double-barrier
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摘要 采用散射矩阵的方法研究了电子在由两个方势垒组成的双势垒结构中的隧穿特性.将电子在双势垒中的隧穿过程分为相干输运和非相干输运两部分来研究,相干输运导致了隧穿透射系数随中间层厚度变化产生量子振荡,而非相干输运导致了振荡振幅的衰减.双势垒总的透射系数与势垒高度、入射和出射波矢的匹配性有关,数值计算的结果证实了相关结论. Using the scattering matrix method, we study the characteristics of electronic tunneling a double square barrier. Taking into account the tunneling current with ballistic and diffusive components,we present the resuits of ballistic component for oscillation of the transmission coefficient,while the diffusive one leads to decay. It is shown that the overall transmission coefficient of the double-barrier potential is related to the height of potemtial barrier and the matching of incident wave and the out wave. The conclusions are confirmed by the numerical results.
出处 《大学物理》 北大核心 2008年第7期6-8,11,共4页 College Physics
基金 解放军理工大学预研基金资助项目(0605002)
关键词 双势垒 量子隧穿 散射矩阵 相干输运 double-barrier quantum tunneling scattering matrix coherent transport
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参考文献6

  • 1曾谨言.量子力学(卷Ⅰ)[M].3版.北京:科学出版社,1995:98-108.
  • 2杨军,汪军.自旋注入效率的电学探测[J].解放军理工大学学报(自然科学版),2005,6(6):609-612. 被引量:5
  • 3Zhi ping niu,Zhi bo feng,Jun yang,et al. Tunneling magnetoresistence of double-barrier tunnel junctions in sequential and coherent regimes[ J]. Phys Rev B ,2006,73 : 014 432.
  • 4Julliere M. Tunneling between ferromagnetic films [J]. Phys lett 54A, 1975:225-226.
  • 5Datta S. Electronic transport in mesoscopic systems [ M ]. Cambridge : Cambridge University Press, 1995 : 119--129.
  • 6Yuasa S, Nagahama T,Suzuki Y. Spin-Polarized Resonant Tunneling in Magnetic Tunnel Junctions [ J ]. Science, 2002,297 : 234--237.

二级参考文献24

  • 1SMITH D L,SILVER R N.Electrical spin injection into semiconductors[J].Phys Rev B,2001,64:045323-045331.
  • 2ALBRECHT J D,SMITH D L.Electron spin injection at a Schottky contact[J].Phys Rev B,2002,66:113303.
  • 3FIEDERLING R,KEIM M,REUSCHER G,et al.Injection and detection of a spin-polarized current in a light-emitting diode[J].Nature(London),1999,402:787-790.
  • 4OHNO Y,YOUNG D K,BESCHOTEN B,et al.Electrical spin injection in a ferromagnetic semiconductor heterostructure[J].Nature(London),1999,402:790-792.
  • 5JONKER B T,PARK Y D,BENNETT B R,et al.Robust electrical spin injection into a semiconductor heterostructure[J].Phys Rev B,2001,62:8180.
  • 6JOHNSON M.Theory of spin-dependent transport in ferromagnet-semiconductor heterostructures[J].Phys Rev B,1998,58:9635.
  • 7HAMMAR P R,BENNET B R,YANG M J,et al.Observation of spin injection at a ferromagnet-semiconductor interface[J].Phys Rev Lett,1999,83:203-206.
  • 8MONZON F G,TANG H X,ROUKES M L.Magnetoelectronic phenomena at a ferromagnet-semiconductor interface[J].Phys Rev Lett,2000,84:5022.
  • 9MOLENKAMP L W,SCHMIDT G,BARUER G E W.Rashba hamiltonian and electron transport[J].Phys Rev B,2001,64:121202-121206.
  • 10JULLIERE M.Tunneling between ferromagnetic films[J].Phys lett 1975 54A:225-226.

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