摘要
采用硅光电负阻器件PLBT可以构成光控振荡器。只要对在光照下PLBT的输出特性进行合理的解析描述,就可以应用KBM方法求解该系统的第一次近似解以及高次近似解。在设计这种振荡器时,该解析解有助于正确选择电路参数。
Using si-photo lambda bipolar transistor PLBT,the photo-controlled oscillator can be constructed. If only its output characteristic can be described analytically,then it's possible to use KBM method to obtain the primary approximate solution and higher order approximate solutions for this system. When such oscillator is designed,these analytic solutions are helpful to choose the parameters of electro-circuit accurately.
出处
《自动化与仪表》
2008年第8期58-60,共3页
Automation & Instrumentation
关键词
硅光电负阻器件
拉姆达光电双极晶体管
非线性微分方程
摄动理论
KBM平均法
Si-photo negative resistance device
photo-Lambda bipolar transistor(PLBT)
non-linear differential equation
perturbation theory
KBM average method