摘要
可控硅整流器件(SCR)结构用于集成电路的静电放电(ESD)保护具有提高保护效率,减小芯片面积和降低寄生参数的优点。对基于SCR的双向ESD保护器件进行了研究;建立了一种ESD保护器件仿真设计平台,对该器件的结构、关键参数和性能进行了系统的仿真和优化。得到的改进器件不仅对ESD人体模型(HBM)的保护性能好,引入电路的寄生效应小,而且ESD保护的各关键性能参数也可以方便地进行调整。
An improved ESD protection device based on dual-polarity silicon controlled rectifier (DSCR) was proposed. A platform for ESD simulation and verification was built. The structure, crucial parameters and performance optimization of the proposed device were discussed based on the platform. The improved DSCR has a high ESD protection level on human body model (HBM) and low parasitic effects, with crucial parameters easily adjustabl.
出处
《微电子学》
CAS
CSCD
北大核心
2008年第4期485-488,492,共5页
Microelectronics
关键词
双向可控硅整流器件
静电放电保护
人体模型
Dual-polarity silicon controlled rectifier
ESD protection
Human body model