摘要
对500-1200V统一工艺平台的VDMOS功率器件的钝化膜工艺进行了研究。通过选择钝化膜介质（SiON）工艺条件，选择合适的光刻条件，使该器件的表面极化低于50V，大大增强了器件在高压工作环境下的可靠性。
A research was made on the passivation film process for high voltage VDMOS device platform. By choosing proper process conditions for passivation of CVD films and photolithography, a surface polarization below 50 V was achieved, which greatly enhanced the reliability of the device for high voltage applications.
出处
《微电子学》
CAS
CSCD
北大核心
2008年第4期497-501,共5页
Microelectronics
关键词
VDMOS
功率器件
钝化膜
氮氧化硅
极化
VDMOS
Power device
Passivated film
Silicon oxynitride
Polarization
