摘要
当MOSFET器件的栅长缩小到纳米尺度以后,金属源/漏(S/D)结构具有一系列的优点:原子级突变结能够抑制短沟道效应(SCE),低S/D串联电阻和接触电阻,S/D形成的低温工艺适宜集成高k栅介质、金属栅和应变硅等新材料,使之成为掺杂硅S/D结构最有希望的替代者。文章主要介绍形成低肖特基势垒高度(SBH,Schottky Barrier Height)结材料的选择,以及采用杂质分凝、界面工程和应变工程等肖特基势垒调节技术的主要制备工艺和势垒调节机理。
As MOSFET＇s gate length is scaling into nanometer regime, instead of impurity doped S/D, metal S/ D has been considered as the most promising candidate, due to its atomically abrupt junctions, to minimize short- channel effects, low source/drain series resistances and contact resistance. In addition, the low-temperature process for S/D formation enables integration of critical new materials, such as high-k gate insulators, metal gates and strained silicon substrate, etc. In this paper, low Schottky barrier height （SBH） material and several SBH lowering techniques, including dopant segregation, interface engineering and strained engineering, were described, together with their fabrication techniques and SBH modification mechanism.
出处
《微电子学》
CAS
CSCD
北大核心
2008年第4期524-529,共6页
Microelectronics
