一种新型超势垒整流器

A Novel Super Barrier Rectifier

提出了一种新型的超势垒整流器(SBR)。对SBR结构势垒进行了理论分析,建立了该器件正向压降的解析式,并设计了该器件的工艺流程。仿真结果表明:SBR的正向压降和功耗比常规PN结二极管小,反向恢复特性优于常规PN结二极管;SBR比肖特基二极管的可靠性高。该分析可以很好地指导这类整流器件的设计。

A novel super barrier rectifier （SBR） was presented. The structure barrier of SBR was theoretically analyzed, and analytical formula of the forward voltage drop for this device was established. Meanwhile, a fabrication process was designed. Simulation results indicated that both the forward voltage drop and power dissipation of the SBR were lower, and the reverse recovery characteristics were also better than conventional P-N junction diodes. In addition, the SBR had a higher reliability, compared with Schottky diodes. The analysis may serveoas guidance to design of such rectifier.