PCVD 法沉积 TiN 膜若干问题的研究探讨

Research on Some Problems Involved in PCVD Depositing of TiN Films

探讨了ＰＣＶＤ法沉积ＴｉＮ膜器壁副产物的成分及形成机制，并提出了解决办法。同时对脉冲、直流ＰＣＶＤ沉积ＴｉＮ膜中的氯含量、膜的生长、晶粒大小及膜结构进行了对比分析，认为脉冲ＰＣＶＤ比直流ＰＣＶＤ更适合于ＴｉＮ膜的沉积。

During the depositing of TiN films by PCVD,by products are produced on the deposition chamber wall. The chemical composition and formation mechanism of the by products are discussed in the paper and the methods of eliminating or reducing the by products are suggested.Wtih TiN films deposited by means of Pulse PCVD or D.C.PCVD method,the chlorine content,the grain size and the growth of films are studied and compared.Results indicate that Pulse PCVD is more suitable than D.C.PCVD for depositing TiN films.