晶体管低频噪声模型参数的精确测量

Accurate Measurement of Low-Frequency Noise Model Parameters of Transistor

本文针对目前使用的晶体管ＥｎＩｎ噪声模型及其测量方法的不足之处，提出改进方案，并给出精确测量噪声模型参数的方法。根据误差分析，提出测量谱相关系数的源阻抗选择规则，并对低噪声放大器进行实际测量，给出适合于低噪声电路设计的三维ＦＺｓ图形。

In this paper, the weaknesses of the E n I n noise model of transistor which is widely used in low frequency and its measurement methods are analyzed, and the improved scheme and more accurate measurement methods are put forward. According to error analysis theory, to improve the measuring accuracy of spectral correlative coefficients, the selection rules of source resistance and source reactance are also given. By means of above methods a commercial low noise transistor is tested, and the 3 dimension F Z s diagram suitable for low noise circuit design is presented.