未经特殊退火处理过的Bi(2212)银基厚膜

Bi-2212 Thick Films on Ag Substrate without any Special Heat Treatment

使用充分预烧的Bi（2212）粉，进行丝网法银基Bi（2212）厚膜工艺研究。结果证明部分熔融温度以875℃左右为宜，退火温度≤840℃，样品可以免去特殊条件下的退火工艺。研究还表明，在相同的部分溶融温度下，退人温度和退火时间决定了样品的晶体结构、织构、Tc和Jc。因而，为进一步提高样品的Jc研究创造了条件。

Bi - 2212 thich films were fabricated on Ag substrate by a screen printing method with fully reacted powder. Investigations show that when the films are heated to a partial melt temperatures T≤840℃, high quality superconducting films can be obtained without any special heat - treatment. Under the same partial - melt temperature, the crystal structure, texture, Tc and Jc of the films depend on their annealing temperature and time.