摘要
提出了基于TSMC0.35μm锗硅(SiGe)BiCMOS工艺的全差分跨导运算放大器(OTA),充分利用了异质结晶体管(HBT)共射共基结构的大跨导、小寄生效应、低噪声等特性。采用共源共栅以及增益倍增技术的负载管,在3.3V单电源下,开环增益为92.2dB,单位增益频率为1.26GHz,相位裕度为61.1o(负载为550fF时),差分输出摆幅为3V,以此OTA为核心的采样保持放大器(SHA)的最大采样频率为125MHz。
Based on HBT＇s advantages such as high transconductance, small parasitic capacitance and low noise, a fully differential operational transconductance amplifier （OTA） using TSMC 0.35-μm SiGe BiCMOS technology is proposed. The output resistance of PMOS load is improved with the gain-boosting structure. At a 3.3-V power supply, the OTA＇S DC gain is 92.2-dB, the unity-gain frequency is 1.26-GHz at a phase margin of 61.1° （with 550-fF load）, and the OTA＇S differential output swing is 3-V. Based on this OTA, the maximal sample frequency of SHA is 125-MHz.
出处
《电路与系统学报》
CSCD
北大核心
2008年第4期55-58,共4页
Journal of Circuits and Systems
基金
国家自然科学基金资助项目(60476046)
国家部委基金资助项目(51408010205DZ0164)
