摘要
利用简易合金靶材在Si（100）和SiO2基底上磁控溅射制备了Cu（1.42%Ti）薄膜。研究了少量钛对Cu/Si（100）和Cu/SiO2薄膜体系在573-773 K退火前后的微观组织结构以及界面反应的影响。X射线衍射分析表明，溅射态Cu（Ti）薄膜均呈现Cu（111）和Cu（200）衍射峰，而钛显著增强铜薄膜的（111）织构。对于退火态的Cu（Ti）/Si薄膜体系，由于少量钛在薄膜/基底界面处的存在，起到净化界面作用，促使Cu3Si的形成，从而降低了薄膜体系的热稳定性。但对于Cu（Ti）/SiO2薄膜体系，在773 K退火后，仍然呈现出良好的热稳定性。薄膜截面的结构形貌以及界面处俄歇谱的分析结果都充分证实了上述结果。
Cu（1.42%Ti） films were deposited by magnetron sputtering on Si（100） and SiOz substrates. The microstructure and interracial reaction were investigated before and after annealed at 573-773K. X-ray diffraction revealed Cu（111） and Cu（200） peaks for as-deposited Cu（Ti） films and Ti promoted the （111） texture of Cu films. For the annealed Cu（Ti）/Si system, the thermal stability of films decreased because of CusSi formed at 573K, which was due to the purifying effect of small amount of Ti at the interface between the film and substrate. While for the Cu（Ti）/SiO2 system annealed till 773K, the film exhibited good thermal stability. These results were also proved by observations of cross-sectional morphologies and the Auger survey spectrum of the interface.
出处
《理化检验（物理分册）》
CAS
2008年第8期397-400,450,共5页
Physical Testing and Chemical Analysis(Part A:Physical Testing)
基金
上海应用材料研究发展基金(AM.0525)
关键词
薄膜
微观结构
界面反应
净化作用
热稳定性
Films
Mierostrueture
Interfacial reaetion
Purifying effeet
Thermal stability
