摘要
使用安捷伦的ADS系统,设计一个适用于射频无线的CMOS LNA,使用0.25μm的制造工艺实现全集成化设计,工作电压为2.5 V,工作频率为2.38 GHz。重点对LNA的输入输出阻抗匹配,线性度,噪声系数,功率增益等参数进行仿真和分析。通过对电路的设计和元件的调整,设计出LNA电路的最佳性能。由仿真结果可以看出,本电路在高达20 dB功率增益的情况下,只有1.5 dB的噪声系数,并且有良好的输入输出阻抗特性。
The design of CMOS LNA in RF range is presented, which is based on ADS system of Agilent and using the 0. 25 μm technology flow to realize the IC design,Vdd = 2. 5 V and f0 = 2.38 GHz. Focusing on the impedance matching at input and output port of the LNA, linearity, noise figure ahd power gain, Through the design and adjusking to get the optimal parameter of the circuit. From the result of simulation,the circuit only shows 1.5 dB NF at up to 20 dB power gain,and performs well on characteristic on input and output impedance.
出处
《现代电子技术》
2008年第17期151-153,共3页
Modern Electronics Technique
