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FET宽带小信号等效电路的研究 被引量:1

Research of FET Broadband Small Signal Equivalent Circuit
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摘要 介绍了一种确定宽带FET小信号等效电路参数的一种方法。该方法基于FET内部器件的Y参数(Z参数)进行分析,从中得到与频率无关的等效电路参数(电容、电感、电阻值),根据模型可以得到任意指定频率下的电路等效模型或某频带内的参数均值。通过仿真测试,该等效模型在高达25 GHz频带范围频率变化,器件参数保持恒定,并与实际器件工作状况非常吻合。 A method to determine the broadband small signal equivalent circuit of FET is introduced. This method is based :on an analytic solution of the equations for the Y parameters of the intrinsic device and allows direct determination of the circuit elements at any specific frequency or averaged over a frequency range. The validity of the equivalent circuit can be verified by showing the frequency independence of each element.
作者 武超 张刚
机构地区 洛阳理工学院
出处 《现代电子技术》 2008年第17期168-170,共3页 Modern Electronics Technique
关键词 宽带 Y参数 频率无关 FET broadband Y parameters frequency independence FET
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参考文献9

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同被引文献6

  • 1黄淮,吴郁,亢宝位.降低功率MOSFET导通电阻R_(ON)的研究进展[J].电力电子,2007,5(4):13-18. 被引量:4
  • 2P. Heymann et al. Experimental Evaluation of Microwave Field Effect Transistor Noise Models. IEEE Trans. Microwave Theory Tech., 1999, 47(2).
  • 3H. Fukui. Determination of the Basic Device Parameters of a GaAs MESFET. Bell System Technical Journal, 1979,58 (3).
  • 4M. Berroth and R. Bosch. Broad - Band Determination of the FET Small - Signal Equivalent Circuit. IEEE Trans. Microwave Theory Tech. , 1990, 38, (7).
  • 5K. W. Lee et al. Source, Drain, and Gate Series Resistances and E- lectron Saturation Velocity in Ion-Implanted GaAs FET' s. 1EEE Trans. On Electron Devices. 1985, ED-32 (5).
  • 6孟茜倩,程加力,高建军.基于MESFET非线性模型的MOSFET DC建模技术[J].电子器件,2012,35(3):263-266. 被引量:5

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