摘要
1/f噪声,由于其能够反映器件的质量与可靠性参数,其研究受到重视。本文首先较为系统地介绍了1/f噪声源两种较为成熟的理论:迁移率涨落模型和载流子涨落模型,最后介绍了几个1/f噪声与半导体器件参数漂移相关的实例。
Due to 1/f noise can reflect the quality and reliability of devices, the study has garnered interest. The article systematically introduced two kinds mature theory of 1/f noise source： mobility fluctuation model and carrier fluctuation model. Then several examples of 1/f noise related to drifting of semiconductor parameter were introduced.
出处
《环境技术》
2008年第4期32-34,44,共4页
Environmental Technology
