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蓝宝石晶片抛光过程运动仿真及实验分析 被引量:5

Analysis on the Kinematic Simulation and Experiment of Polishing for Sapphire Wafer
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摘要 本文分析了双面抛光机的抛光原理,建立了晶片在抛光过程中运动的数学模型,采用VC语言对双面抛光加工进行运动仿真,分析了不同参数对抛光效果的影响,获得了最合理的抛光运动参数,并且在抛光机上得到了验证。 This article has analyzed the two-sided buffing machine polishing principle, has established the chip in the polishing process the movement mathematical model, uses the Visual C++ language to carry on the movement simulation to the two-sided polishing processing, analyzed the different parameter to polish the eff^t the influence, has obtained the most reasonable polishing parameter of movement, and obtained the confirmation on the buffing machine.
出处 《现代制造技术与装备》 2008年第4期17-18,25,共3页 Modern Manufacturing Technology and Equipment
基金 江苏省科技厅科技攻关项目(BE2007077) 江苏省高校自然科学基础研究项目(06KJB460119) 江苏省大学生实践创新训练计划项目(07SSJCX011) 盐城市科技局科技发展计划项目(YK2007018)
关键词 蓝宝石 化学机械抛光 运动分析 计算机仿真 sapphire, chemistry machinery polishing, movement analysis, computer simulation
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  • 1Klamecki B E. Comparison of material removal rate models and experimental results for the double-sided polishing process[J]. Journal of Materials Processing Technology, 2001, 109 : 248~253.
  • 2Kiyoshi A, Nakamura N. Double-side polishing for VLSI of silicon wafer[J]. Society for Precision Engineering, 1993, 59(7):1163~1168.
  • 3Jan H. Improved geometry of double-sided polished parallel wafers prepared for direct wafer bonding[J].Applied Optics, 1994,33(34) :7945~7954.
  • 4Nakamura T, Kiyoshi A, Masami M. Development of bowl feed and double side polishing machine with in situ thickness monitoring of silicon wafers[J]. Society of Precision Engineering/Seimitsu Kogaku Kaishi, 1993,59(4) :661~666.
  • 5聂陶荪,冯浩.抛光机磨头主轴动力分析[J].中国陶瓷工业,2000,7(3):16-18. 被引量:13
  • 6吕玉山,蔡光起,华雷.单晶硅片的区域载荷法平坦化抛光[J].沈阳工业学院学报,2003,22(3):1-4. 被引量:1

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