期刊文献+

ZnO基紫外探测器及其研究进展 被引量:2

ZnO-Based UV Detectors and Their Developments
下载PDF
导出
摘要 介绍了ZnO基紫外探测材料的主要制备方法、特性以及器件的最新研究进展,并简要分析了今后的发展方向。 The article describes the materials preparing methods for ultraviolet (UV) detectors based on ZnO thin films and their properties. Furthermore, recent research progress in this field and some development feature in future are also briefly analyzed.
作者 邵立 程东明
出处 《山西电子技术》 2008年第4期77-78,共2页 Shanxi Electronic Technology
关键词 ZNO 紫外探测器 光响应度 ZnO UV detectors spectral responsivity
  • 相关文献

参考文献11

  • 1[1]Peiliang Chen,Xiangyang Ma,Deren Yang.Ultraviolet Electroluminescence from ZnO/p-Si Heterojuctions[J].Journal of Applied Physics101,053103(2007).
  • 2[2]Zi-Qiang Xu,Hong Deng,Juan Xie,et al.Ultraviolet Photoconductive Detector Based on Al Doped ZnO Films Prepared by Sol-Gel Method[J].Applied Surface Science253,2006,476-479.
  • 3杨晓天,刘博阳,马艳,赵佰军,张源涛,杨天鹏,杨洪军,李万程,刘大力,杜国同.ZnO基紫外探测器的制作与研究[J].发光学报,2004,25(2):156-158. 被引量:7
  • 4[4]Ying Li,Shi-Wei Feng,Jing-Ying Sun,et al.The Study of ZnO Photoconductive UV Detector.IEEE,1-4244-0161-5/06.
  • 5叶志镇,张银珠,陈汉鸿,何乐年,邹璐,黄靖云,吕建国.ZnO光电导紫外探测器的制备和特性研究[J].电子学报,2003,31(11):1605-1607. 被引量:33
  • 6[6]Hiromichi Ohta,Masao Kamiya,Toshio Kamiya,et al.UV-Detector Based on Pn-Heterojunction Diode Composed of Transparent Oxide Semiconductors,p-NiO/n-ZnO.Thin Solid Films 445(2003)317-321.
  • 7[7]Zhuang L,Wong K H.Fabrication of Transparent p-n Junction Composed of Heteroepitaxially Grown p-Li0.15Ni0.85O and n-ZnO Films for UV-Detector Applications.Appl.Phys.A 87,787-791(2007).
  • 8[8]Basak D,Amin G,Mallik B,et al.Photoconductive UV detectors on sol-gel-synthesized ZnO films[J].Journal of Crystal Growth 256(2003)73-77.
  • 9[9]Ghosh R,Basak D.Composition Dependent Ultraviolet Photoresponse in MgxZn1-xO Thin Films[J].Journal of Applied Physics 101,113111(2007).
  • 10高晖,邓宏,李燕.ZnO肖特基势垒紫外探测器[J].发光学报,2005,26(1):135-138. 被引量:11

二级参考文献11

  • 1张德恒,D.E.B_(RODIE).用射频溅射方法制备的多晶ZnO薄膜的光响应与其结构变化[J].物理学报,1995,44(8):1321-1327. 被引量:12
  • 2MANASEVIT H M. The use of metal-organics in the preparation of semiconductor materials [J]. J. Electrochem. Soc. , 1969,116: 1725-1732.
  • 3PARK W I, YI G C, JANG H M. Metalorganic vapor-phase epitaxial growth and photoluminescent properties of Zn1 - x MgxO(0≤x≤0.49) thin films [J]. Appl. Phys. Lett., 2001, 79(13):2022-2024.
  • 4MANASEVIT H M, ERDMANN F M, SIMPSON W I. The use of metalorganica in the preparation of semiconductor materials:Ⅳ. The nitrides of aluminium and gallium [J]. J. Electrochem. Soc., 1971, 118:1864-1868.
  • 5LIU Y, GORLA C R, LIANG S, et al. Ultraviolet detectors based on epitaxial ZnO films grown by MOCVD [J]. J. Electronic Materials, 2000, 29:69-74.
  • 6LIANG S, SHENG H, LU Y, et al. ZnO Schottky ultraviolet photodetectors [J]. J. Cryst. Growth, 2001, 225:110-113.
  • 7FABRICIUS H, SKETTRUP BISGAARD P, et al. Ultraviolet detectors in thin sputtered ZnO films [J]. Appl. Optics, 1986, 25:2764-2767.
  • 8叶志镇,陈汉鸿,刘榕,张昊翔,赵炳辉.直流磁控溅射ZnO薄膜的结构和室温PL谱[J].Journal of Semiconductors,2001,22(8):1015-1018. 被引量:49
  • 9张泽洪,孙元平,赵德刚,段俐宏,王俊,沈晓明,冯淦,冯志宏,杨辉.Pt/n-GaN肖特基接触的退火行为[J].Journal of Semiconductors,2003,24(3):279-283. 被引量:2
  • 10王丽玉,谢家纯,林碧霞,王克彦,傅竹西.n-ZnO/p-Si异质结UV增强型光电探测器的研究[J].电子元件与材料,2004,23(1):42-44. 被引量:15

共引文献40

同被引文献17

引证文献2

二级引证文献2

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部