MOCVD生长高铝值Al_xGaAs(x≥0.7)中的碳掺杂

HEAVY CARBON INCORPORATION IN AlxGaAs(x≥0.7) GROWN BY MOCVD

报道了ＭＯＣＶＤ生长的高铝值ＡｌｘＧａＡｓ（ｘ≥０．７）中的非故意碳掺杂．实验研究了Ⅴ／Ⅲ比、生长温度、生长压力、生长速率对载流子浓度的影响，实验发现：碳掺杂主要取决于Ⅴ／Ⅲ比、生长压力、生长速率．在６５０℃到７６０℃之间，生长温度对碳掺杂没有太大影响．

Unintentional carbon doping was studied in highly Al composition AlxGaAs(x≥0.7)grown by metalorganic chemical vapor deposition.The carrier concentration was studied as a function of Ⅴ/Ⅲ ratio,growth pressure,growth temperature and growth rate.Carbon incorporation was found to depend mainly on Ⅴ/Ⅲ ratio,growth pressure,growth rate,and not on the growth temperature in the range of 650℃ to 760℃.