摘要
研究了In掺杂n型ZnO体单晶的化学气相传输法生长和材料性质.利用霍尔效应、X射线光电子能谱、光吸收谱、喇曼散射、阴极荧光谱等手段对晶体的特性和缺陷进行了分析.掺In后容易获得浓度为1018~1019cm-3的n型ZnO单晶,掺入杂质的激活效率很高.随着掺杂浓度的提高,ZnO单晶的带边吸收和电学性质等发生明显的变化.分析了掺In-ZnO单晶的缺陷及其对材料性质的影响.
The Hall effect, XPS, optical absorption, Raman scattering, and cathode luminescence have been used to study the electrical properties, crystal quality, and defects of indium-doped bulk ZnO single crystals grown by the chemical vapor transport (CVT) meth- od. Indium doped n-type ZnO single crystals with a carrier concentration of 10TM --10TM cm-3 have been obtained reproducibly by CVT. The doped indium exhibits high activation efficiency as a shallow donor in a ZrlO single crystal. As doping concentration in- creases, the optical absorption and electrical properties of the In-ZnO change significantly. Defects and their influence on the ln-ZnO single crystals have been analyzed.
基金
国家自然科学基金资助项目(批准号:60736032)~~