摘要
介绍了一种低温漂的 BiCMOS 带隙基准电压源及过温保护电路。采用 Brokaw 带隙基准核结构,通过二阶曲率补偿技术,设计了一种在-40℃～+160℃的温度变化范围内温度系数为25ppm/K、输出电压为1.2±0.000 5V 的带隙基准电压源电路。电源电压抑制比典型情况下为72dB。这种用于内部集成的带热滞回功能的过温保护电路,过温关断阈值温度为160℃,温度降低,安全开启阈值温度140℃,设计的热滞回差很好地防止了热振荡现象。
An over-temperature-protecting BiCMOS bandgap reference circuit with low drift temperature is presented, The pro-totype is implemented with Brokaw bandgap reference cell using second-order temperature curvature compensation. The simulation results for this circuit using Hspice show that the temperature coefficient is about 25ppm/K and the output reference voltage is 1.2±0.0005V over the -40℃ to ＋160℃temperature range. The typical PSRR（Power Supply Rejection Rate）is 72dB, The threshold temperatures of the internal integrated thermal shutdown circuit with hysteresis are 160℃when OTP shutdown and 140℃ when safely turnon, Designed hysteresis scope can prevent thermal oscillation perfectly.
出处
《电子技术应用》
北大核心
2008年第8期69-72,74,共5页
Application of Electronic Technique
