摘要
文中讨论了非晶硅光电二极管及CCD器件的设计考虑。用α－Si：H光电二极管构成CCD器件的光敏元，提高了光敏单元填充因子，并提出了图像传感器的结构和制作工艺。
Two sandwich-structures of photodiodes arrays using hydrogenatedamorphous sillicon films are compared in this paper, and their characteristics are alsodiscussed in detail. As a result, the P-I junction hydrogenated amorphous silicon stripe-type photodiode array are chosen as photoelements of CCD image sensor. In design con-siderations of CCD image sensor, pixel structure and parameters of signal processing ca-pability, responsivity, and dynamic range of image sensor are focused on. Finally, theprocess of CCD image sensor is described in brief.
出处
《红外与激光工程》
EI
CSCD
1997年第6期46-51,共6页
Infrared and Laser Engineering
基金
重庆大学光电技术及系统开放研究实验室资助
