Ag-SiO_2纳米复合薄膜微结构研究

A STUDY ON MICROSTRUCTURE OF Ag-SiO_2 NANOMETER COMPOSITE THIN FILMS

本文采用基片可旋转并利用红外灯管加热基片多靶磁控溅射台的制备了不同成分及基片温度的Ag～Sio2复合薄膜。采用XRD、TEM、SEM等手段分析了薄膜的微观组织结构，并测定了薄膜的电阻率。研究结果表明：复合薄膜的微结构由多晶富Ag区和细密的Ag晶体和非晶SiO2混合物组成；室温下随SiO2含量的增加．薄膜中金属Ag呈网状分布．晶粒细化，电阻率上升；随基片温度的升高．复合薄膜中银晶体最终聚集成孤立的纳米颗粒；与微结构相对应，薄膜的电阻率可在大范围（102～106μΩcm）内变化。

Ag-SiO2, composite films were Prepared by magentron co-sputtering Ag and SiO2, with the substrate rotating.The microstructure was studied by XRD,SEM,TEM and the resistivity wns measured. The results show that the microstructure consists of polycrystalline Ag and the mixture of polycrystalline Ag and amorphous SiO2. With the SiO2, content increasingy in room temperature,the Ag crystal in the thin film became smaller and distributed as meshed and the resistivity of the film increased. With substrate temperature rising,Ag crystals accumulated to form nanometer particles. In accordance to the microstructure, the resistivity of films varied in the range of 1O 2μΩ. cm－10 6μΩ. cm.