期刊文献+

全钙钛矿La0.5Sr0.5CoO3/PbZr0.53Ti0.47O3/La0.5Sr0.5CoO3异质结的结构与性能

Structural and Physical Properties of all Perovskite La_(0.5)Sr_(0.5)CoO_3/PbZr_(0.53)Ti_(0.47)O_3/La_(0.5)Sr_(0.5)CoO_3 Heterostructure
下载PDF
导出
摘要 应用射频磁控溅射法在SrTiO3(STO)基片上制备了全钙钛矿结构La0.5Sr0.5CoO3/PbZr0.53Ti0.47O3/La0.5Sr0.5CoO3(LSCO/PZT/LSCO)电容器异质结,并进行了结构和性能的表征.X射线衍射(XRD)的研究表明,LSCO/PZT/LSCO异质结在SrTiO3(STO)基片上为外延生长.对该电容器铁电性能的研究发现,在5 V驱动电压下,电滞回线饱和趋势良好,矫顽场电压为1.8 V和剩余极化强度为21.5×10-6C/cm2,漏电流为8.9×10-8A/cm2.实验还证实该电容器具有良好的脉冲宽度依赖性及抗疲劳特性. All perovskite La0.5Sr0.5CoO3/PbZr0.53Ti0.47O3/La0.5Sr0.5CoO3 (LSCO/PZT/LSCO) capacitor heterostructure have been fabricated on SrTiO3 (STO)substrate using radio frequency sputtering method, the structural and physical properties of the heterostructure have been investigated. X-ray diffraction analysis (XRD) indicates that LSCO/PZT/LSCO heterostructure is epitaxially grown on SrTiO3 (STO)substrate. Ferroelectric properties are studied, it is found that the hysteresis loop of LSCO/PZT/LSCO capacitor is well saturated at 5 V. The coercive voltage, remnant polarization, and leakage current density are 1.8 V, 21.5 ×10^-6A/cm^2' and 8.9×10^-8A/cm^2, respectively. Moreover, LSCO/PZT/LSCO capacitor possesses good pulse width dependence, and fatigue resistance.
出处 《河北大学学报(自然科学版)》 CAS 北大核心 2008年第4期369-372,共4页 Journal of Hebei University(Natural Science Edition)
基金 973前期研究专项(2007CB616910) 教育部科学技术研究重点项目(207013) 河北省自然科学基金重点项目(E2005000130) 河北省科技攻关项目(04213579)
关键词 钙钛矿结构 PZT 异质结 铁电薄膜 perovskite PZT heterostructure ferroelectric film
  • 相关文献

参考文献17

  • 1SEONG KON KIM, YOUNG HO SEO. Fabrication and characterization of the piezoelectric microtransformer based on microelectromechanical systems[J]. Appt Phys Lett, 2006,88(26): 263510.1- 263510.3.
  • 2PADMAJA GUGGILLA,ASHOK K BATRA, JAMES R CURRIE, et al. Pyroelectric ceramics for infrared detection applications[J ]. Materials Letters, 2006, 60(16) : 1937 - 1942.
  • 3WANG YI, LIU BAOTING,WEI FENG, et al. Fabrication and electrical properties of (111 ) textured (Ba0.6Sr0.4 )TiO3 film on platinized Si substrate[J]. Appl Phys Lett, 2007, 90(4) : 042905.1 - 042905.1
  • 4SHEN ZUYAN,SHIH WAN Y, SHIH WEI HENG. Self-exciting, self-sensing PbZr0.53Ti0.47 O3/SiO2 piezoelectric microcantilevers with femtogram/Hertz sensitivity[J]. Appl Phys Lett, 2006, 89(2) : 023506.1 - 023506.3.
  • 5LEE JUNE KEY, KIM TAE-YOUNG, CHUNG ILSUB, et al. Characterization and elimination of dry etching damaged layer in .Pt/Pb(Zr0.53Ti0.47)O3/Pt ferroelectric capacitor[J]. Appl Phys Lett, 1999, 75(3): 334- 336.
  • 6LENG W J,YANG C R,JI H,et al. Electrical and optical properties of lanthanum-modified lead zirconate titanate thin films by radio-frequency magnetron sputtering[J]. J Appl Phys, 2006,100(10) : 106102.1 - 106102.3.
  • 7DETALLE M, ReMIENS D, LEBRUN L, et al. Electrical property evaluation of manganese-fluorine codoping of lead zirconate titanate thin films: Compatibility between hard material and piezoelectric activity[J]. J Appl Phys, 2006, 100(9):094102.1 - 094102.5.
  • 8BAO DINGHUA, SCHOLZ ROLAND, ALEXE MARIN, et al. Growth, microstructure, and ferroelectric properties of Pb(Zr0.4 Ti0.6) O3/PbZrO3 superlattices prepared on SrTiO3 ( 100 ) substrates by pulsed laser deposition [ J ]. J Appl Phys, 2006,99 (3) : 034102.1 - 034102.7.
  • 9YOKOYAMA SHINTARO, HONDA YOSHIHISA, MORIOKA HITOSHI, et al. Dependence of electrical properties of epitaxi- al Pb(Zr,Ti)O3 thick films on crystal orientation and Zr/(Zr + Ti) ratio[J]. J Appl Phys, 2005, 98(9) :094106.1 -094106.8.
  • 10AGGARWAL S, UDAYAKUMAR K R, RODRIGUEZ J A. Stoichiometry and phase purity of Pb(Zr,Ti)O3 thin films deposited by metal organic chemical vapor deposition[J]. J Appl Phys, 2006, 100(6) :064103.1 - 064103.9.

二级参考文献35

  • 1TAKAHIRO OIKAWA, HITOSHI MORIOKA, ATSUSHI NAGAI, et al. Thickness scaling of poiycrystalline Pb(r,Ti)3 films down to 35 nm prepared by metalorganic chemical vapor deposition having good ferroelectric properties[J]. Appl Phys Lett, 2004, 85: 1754.
  • 2HIROSHI FUNAKUBO,GOUJI ASANO, TOMOHIKO OZEKI, et al. Effect of solvent on MOCVD of Pb(r,Ti)3 films liquid-delivery source supply method[J]. J Electrochem Soc, 2004, C46:3151.
  • 3HO-JUNG SUN, EUN SEOK CHOI, TAE KWON LEE, et al. Effect of high-temperature metal-organic chemical vapor deposition of Pb(r,Ti)3 thin films on structural stabilities of hybrid Pt/IrO2/Ir stack and single-layer Ir bottom Electrodes[J]. Jpn J Appl Phys, 2004, 143: 2651.
  • 4JIWEI ZHAI, HUNG T F, HAYDN CHEN. Relaxor and nonlinear behaviors of SrTiO3/BaTiO3 multilayers derived by a sol-gel process[J]. Appl Phys Lett, 2004, 85: 2026.
  • 5MAKI K, LIU B T, SO Y, et al. Low-temperature fabrication of epitaxial and random-oriented Pb(r,Ti)3 capacitors with SrRuO3 electrodes on Si wafers[J]. Integrated Ferroelectrics, 2003, 52: 19,31.
  • 6JIWEI ZHAI , HAYDN CHEN. Electric fatigue in Pb(b,Zr,Sn,Ti)3 thin films grown by a sol-gel process[J]. Appl Phys Lett, 2003,83(5)978 .
  • 7XU Y H. Ferroelectric thin films[Z]. Pittsburgh, Pennsylvania, USA:Materials Research Society, 1990.
  • 8CHEUNG J T, MORGAN P E D, LOWNDES D H, et al. Structural and electrical properties of La0.5Sr0.5CoO3 epitaxial films[J]. Appl Phys Lett, 1993, 62: 2045.
  • 9AL-SHAREEF H N, KINGON A I. Eelectrode materials for ferroelectric thin film capacitors and their effect on the electrical properties[A].ARAUJO C P,BALDO P M,SCOTT J F,et al.Ferroelectric thin films:synthesis and basic properties[C].Switzerland:Gordon and Breach,1996,193.
  • 10TUTTLE B A,DESU S B,RAMESH R,et al.Ferroelectric thin films IV[Z].Pittsburgh:Materials Research Society,1995,361:307.

共引文献6

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部