在室温下的氧环境中利用Ar^+轰击Si(100)获得氧化硅薄膜
-
1范垂祯,杨得全,张韶红,汪贵华.低能Ar^+轰击对GaAs、Al_(x)Ga_(1-X)As表面成分的影响[J].微细加工技术,1990(4):23-27. 被引量:1
-
2杨卓,杨靖治,黄永,张锴,郝跃.Effect of alumina thickness on Al_2O_3/InP interface with post deposition annealing in oxygen ambient[J].Chinese Physics B,2014,23(7):681-685.
-
3SUN Chuan-wei WANG Yu-tai LI Nian-qiang.Behaviour of Ti Based on Si(111) Substrate at High Temperature in Oxygen[J].Semiconductor Photonics and Technology,2007,13(2):161-163.
-
4史佳新,吉元,徐学东,肖卫强,张隐奇,郭汉生.氧环境扫描电镜对氧化物的荷电补偿[J].北京工业大学学报,2003,29(2):247-250. 被引量:1
-
5李翠平,杨保和,陈希明,吴小国.Effects of annealing on the characteristics of ZnO films deposited in various O_2/(O_2+Ar) ratios[J].Optoelectronics Letters,2010,6(4):284-287. 被引量:8
-
6赵梅,梁仁荣,王敬,许军.Effective interface passivation of a Ge/HfO_2 gate stack using ozone pre-gate treatment and ozone ambient annealing[J].Journal of Semiconductors,2013,34(6):181-184.
-
7江瑶瑶,王晶晶,黎燕,钟福新,高云鹏,朱义年,莫德清.球形CdSe纳米晶的制备及其光电性能[J].半导体技术,2017,42(1):43-49. 被引量:1
-
8李依新.严格厌氧菌为何不能生活在有氧环境中[J].生物学教学,2006,31(12):24-25.
-
9李观启,钟平,黄美浅,曾绍鸿.背面氩离子轰击改善MOS系统界面特性和击穿特性[J].华南理工大学学报(自然科学版),1995,23(12):115-120. 被引量:3
-
10谢清连,阎少林,方兰,赵新杰,游石头,张旭,左涛,周铁戈,季鲁,何明,岳宏卫,王争,李加蕾,张玉婷.热处理对MgO基片的表面形貌以及对CeO_2和Tl-2212薄膜生长的影响[J].低温与超导,2008,36(4):1-4. 被引量:6