稀释气体流量对低压化学气相沉积硼掺碳涂层的影响

Effect of dilution gas flow on low pressure CVD boron-doped carbon coatings

以BCl3-C3H6-H2为气相反应体系,采用低压化学气相沉积制备硼掺碳涂层。研究了Ar气稀释流量对硼掺碳涂层沉积速度、形貌、组成和键合状态的影响。结果表明,不同稀释气体流量作用下,硼掺碳的沉积速度没有明显变化,产物形貌由致密向层状转变,硼元素含量稍有减少而碳元素含量稍有增加。沉积产物中B元素的键合方式以B-sub-C和BC2O为主。结合化学反应和气体扩散,探讨了稀释气体的作用机制,表明PyC形成反应的主导作用导致稀释气体流量对沉积速度作用不明显,而BCl3和C3H6在Ar气中扩散系数的差异导致产物形貌和组成发生变化。

Taking BC13-C3 H6-H2 as gas-phase reaction system, boron-doped carbon coating was prepared by means of low pressure chemical vapor deposition. The effects of Ar gas dilution flow on deposition rates, morphologies,compositions and bonding states of the deposits were investigated. The results show that under different Ar gas dilution flow, deposition rates of boron-doped carbon are almost same,morphologies of the deposits is transferred from compact structure to delaminated structure; boron element content increases a little,while carbon element content decreases a little;B element bonding states in deposits present mainly B-sub-C and BC2O. In combination of chemical reaction and gas diffusion theory, action mechanism of dilution gas was discussed. The PyC dominates deposition reaction, which reduce the effect of dilution gas flow on deposition rate. The difference of diffusion coefficients of BCl3 amt C3H6 precursors in Ar gas can cause morphologies and compositions of the deposits changed.