摘要
The N-Ag codoped ZnO films are deposited on quartz glass substrates by ultrasonic spray pyrolysis technology. The results indicate that the p-type conductivity in ZnO films is greatly enhanced by the double acceptor codoping of N and Ag compared with that of Ag- and N-monodoped ZnO films, and the NAg codoped low-resistivity p-type ZnO films with the resistivity of 1.05 Ω·cm, relatively high carrier concentration of 5.43×10^17 cm^-3, and Hall mobility of 10.09 cm^2 V^-1s^-1 are obtained under optimized conditions. This achievement confirms that p- type ZnO with acceptable properties for optoelectronic applications could be realized by simultaneous codoping with two potential acceptors.
The N-Ag codoped ZnO films are deposited on quartz glass substrates by ultrasonic spray pyrolysis technology. The results indicate that the p-type conductivity in ZnO films is greatly enhanced by the double acceptor codoping of N and Ag compared with that of Ag- and N-monodoped ZnO films, and the NAg codoped low-resistivity p-type ZnO films with the resistivity of 1.05 Ω·cm, relatively high carrier concentration of 5.43×10^17 cm^-3, and Hall mobility of 10.09 cm^2 V^-1s^-1 are obtained under optimized conditions. This achievement confirms that p- type ZnO with acceptable properties for optoelectronic applications could be realized by simultaneous codoping with two potential acceptors.
基金
Supported by the National Natural Science Foundation of China under Grant Nos 60576054 and 50532080, the Specialized Research Fund for the Doctoral Programme of Higher Education of China under Grant No 20070141017, the Natural Science Foundation of Liaoning Province under the Grant No 20072178, the Excellence Youth Teacher Cultivation Fund by Dalian University of Technology in 2005 and 2006, Open Fund of Key Laboratory for MEMS, Liaoning Province.
