高电荷态离子与SiO2表面相互作用的研究

Study of the interaction of highly charged Ions with solid surface of SiO_2

高电荷态离子(Pbq+,Arq+)由兰州近代物理研究所的ECR实验平台所产生,轰击非晶态SiO2表面.用微通道板测量溅射粒子产额的角分布.用公式拟合实验溅射角分布得到了较好的结果,并给出了初步的理论解释.由此得出了高电荷态离子与SiO2表面作用的微分溅射截面.实验结果表明高电荷态离子能够增加动能溅射;同时高电荷态离子入射能够引起势能溅射.在大角度入射时,溅射产额主要是由碰撞引起的;在小角入射时势能溅射所占比重会增大.

In this work,the highly charged ions （HCIs） hr^q＋ ./Vb^q＋ were extracted from ECR platform at Institute of Modern Physics in Lanzhou and impacted solid surface of SiO2. The angular distribution of secondary particle was measured by multi-channel plate （MCP）. The result was fitted by formula and a brief interpretation was given. It is found that the sputtering yield of kinetic impact is increased by HCIs and the potential sputtering （PS） could be induced by impact of HCIs. The sputtering yield dominated by elastic collision between HCIs and the material atoms with larger incident angle. The smaller incident angle is, the larger fraction of yield of PS would be.