期刊文献+

密度泛函理论对Ga_mAs_n团簇的结构及稳定性的研究 被引量:7

Structures and stability of small Ga_mAs_n clusters
下载PDF
导出
摘要 利用密度泛函理论(DFT)对GamAsn(m=1,2;n=1-5)团簇的几何结构及稳定性进行了研究.在B3LYP/6-31G^*水平上进行了结构优化和频率分析,得到了GamAsn(m=1,2;n=1-5)团簇的基态和亚稳态结构.结果表明,在GamAsn(m=1,2;n=1-5)团簇中,团簇的稳定性随着总原子数的增多而增大;总原子数相同的团簇,As原子多的团簇比Ga原子多的团簇稳定;最高占据轨道(HOMO)和最低空轨道(LUMO)的能级差(Egap)随As原子数的增加而变化,且大体呈现奇偶交替变化规律;原子间的振动频率均在太赫兹频段,为GaAs团簇纳米材料的太赫兹电磁波检测和太赫兹电磁波辐射提供了依据. Geometric structures and stability of GamAsn (m = 1,2;n = 1- 5) dusters have been studied using the density functional theory (DFT). Structural optimization and frequency analysis were carried out at the B3LYP/6-31G^* level. All ground state structures and meta-stable state structures of GamAsn ( m = 1,2; n = 1 5) clusters have been obtained. Our calculations reveal the stability of GamAsn ( m = 1,2 ; n = 1 - 5) clusters tends to increase with the increase of the number of total atoms. As-rich clusters are more stable than Ga-rich clusters generally among clusters with the same total atoms. The energy gap Egap between the highest-occupied molecular orbital (HOMO) and the lowest-unoccupied molecular orbital (LUMO) ,which depend on composition of the clusters and show an even/odd alteration with the number of As atoms in the cluster. All vibrating frequencies Gam Asn (m = 1,2;n = 1 - 5) clusters are frequencies of the terahertz wave band, this result will provide the further ideas for detection and radiation of terahertz wave for this material.
出处 《原子与分子物理学报》 CAS CSCD 北大核心 2008年第4期984-990,共7页 Journal of Atomic and Molecular Physics
基金 国家重大基础研究专项基金(2004CCA04500G) 国家自然科学基金(10390160 10376025 50477011) 西安理工大学创新基金(108-210705)
关键词 GamAsn团簇 密度泛函理论(DFT) 几何结构 振动频率 GamAsn clusters, density functional theory (DFT), geometric structures, vibrating frequency
  • 相关文献

参考文献19

二级参考文献70

  • 1郑浩平,郝静安.Ab initio study of the electronic properties of the planar Ga5N5 cluster[J].Chinese Physics B,2005,14(3):529-532. 被引量:5
  • 2施卫 梁振宪 等.Fabrication and characterization of high-voltage ultra fast GaAs photoconductive swithces[J].半导体学报,1998,19(6):437-441.
  • 3Nayak J, Sahu S N. Study of structure and optical properties of GaAs nanocrystalline thin films [ J ]. Appl. Surf. Sci.2001, 182:407.
  • 4Weir ST, VohraYK, Vanderborgh CA, et al. Structural phase transitions in GaAs to 108 GPa [J]. Phys. Rev.,1989,B9:1 280.
  • 5Durandurdu M, Drabold D A. Ab initio simulation of highpressure phases of GaAs [J]. Phys. Rev., 2002,B66:045209.
  • 6McMahon M I, Nelmes R J. Observation of a Ginnabar Phase in CaAs at High Pressure [ J ]. Phys. Rev. Lett.,1997, 78:3 697.
  • 7Nelmes R J, McMahon M I, Wright N G, et al. Crystal structure of ZnTe Ⅲ at 16 GPa [J]. Phys. Rev. Lett.,1994,73:1 805.
  • 8Nelmes RJ, McMahon M I. Ordered superstructure of InSbⅣ[J]. Phys. Rev. Lett., 1995, 74:106.
  • 9Mujica A, Needs RJ. The Cmcm structure as a stable phase of binary compounds: application to GaAs-Ⅱ[J]. J. Phys.:Condens. Matter, 1996, 8:L237.
  • 10McMahon MI, NelmesR J. Observation of a cinnabar phase in GaAs at high press ure [J]. Phys. Rev. Lett., 1997, 78:3 697.

共引文献28

同被引文献78

引证文献7

二级引证文献13

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部