In2O3的掺杂及气敏性能研究

Research on Doping of In_2O_3 and Its Gas Sensitive Properties

较为详尽地论述了n型半导体材料In2O3的掺杂情况,并就不同金属氧化物掺杂引起的气敏性能作了简单的分析,发现不同的金属氧化物掺杂对NO2、O3及一些还原性气体的灵敏度有不同程度的提高,改善了In2O3的气敏性能,同时还探讨了In2O3对不同气体(H2、H2S、NO2、O3、Cl2、C2H5OH)的敏感机理。

In this text the doping of n-type semiconductor material In2O3 is discussed detailedly, and the gas sensitive properties induced by different metal oxide dopings of In2O3 are analyzed simply. It＇s found that different metal oxide dopings of In2O3 dissimilarly increase the gas sensitivity of NO2 and some reductive gases, and improve the gas sensitive properties of In2O3. In addition the gas sensitive mechanism of In2O3 to different gas（ H2, H2 S, NO2, O3, Cl2, C2 H5 OH） is discussed briefly.