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LSMO缓冲层对PTZT铁电薄膜性能的影响 被引量：3

Effect of LSMO buffer layer on the properties of PTZT thin films
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摘要 采用射频磁控溅射法在Pt/TiOx/SiO2/Si基片上制备了以La2/3Sr1/3MnO3(LSMO)为缓冲层的Pb1.2(Ta0.01Zr0.3Ti0.69)O3(PTZT)薄膜,研究了LSMO层及沉积温度对PTZT薄膜性能的影响.XRD分析表明直接在基片上和在300℃沉积的LSMO缓冲层上生长的PTZT薄膜均为随机取向,而在600℃沉积的LSMO缓冲层上生长的PTZT薄膜为(111)择优取向.铁电特性分析表明LSMO缓冲层明显改善了PTZT薄膜的性能:在600℃沉积的LSMO缓冲层上制备的PTZT薄膜电容在5 V电压(电场约125 kV/cm)下具有饱和电滞回线,剩余极化Pr、矫顽场Ec分别为50.5μC/cm2和55 kV/cm;其疲劳特性也得到了显著改善. La2/3Sr1/3 MnO3 （LSMO） was used as a buffer layer to prepare Pb1.2 （Ta0.01 Zr0.5 Ti0.69）O3 （PTZT） thin films on the stabilized Pt/TiOx/SiO2/Si bottom electrode by RF-sputtering technique. The influence of the temperature of LSMO deposition on the properties of PTZT thin films was studied. XRD measurements of the PTZT thin films demonstrated the random crystal orientation for LSMO deposited at 300 ℃ and a strong （111）-preferred orientation for LSMO deposited at 600 ℃. Characterization of ferroelectric properties showed that the LSMO buffer layer improved the filmsr performance obviously. As for the PTZT thin film with a LSMO buffer layer deposited at 600 ℃, a saturated P-V loop was obtained at an electric voltage of 5 V （the electric field was about 125 kV/ cm）. The remnant polarization P, and coercive field Ec were about 50.5 μC/cm^2 and 55 kV/cm, respectively. In addition, the fatigue characteristics of PTZT thin films with LSMO buffer layer were also improved greatly.
作者 杨卫明 彭刚 李建军 于军
机构地区 华中科技大学电子科学与技术系
出处 《华中科技大学学报（自然科学版）》 EI CAS CSCD 北大核心 2008年第8期56-58,共3页 Journal of Huazhong University of Science and Technology(Natural Science Edition)
基金 国家自然科学基金重大研究计划资助项目(90407023) 国家自然科学基金资助项目(60571009)
关键词 电子材料 铁电薄膜 射频磁控溅射 铁电性能 electronic material ferroelectric film RF （radio frequency ）-sputtering ferroelectric properties
分类号 TN304 [电子电信—物理电子学]
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参考文献8

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同被引文献10

  • 1Nossikpendou S, Caroline S, Denis R, et al. Bottom and top electrodes nature and PZT film thickness influence on electrical properties[J]. Sensors and Actuators A: Physical, 2010, 158(1): 99-105.
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  • 6Chen F, Cheng J R, Yu S W,et al. Structural and electrical properties of Pb (Zr0.53 Ti0.47 ) O3 films prepared on La0.5 Sr0.5 CoO3 coated Si substrates[J]. Journal of the European Ceramic Society, 2010, 30 (2) : 453-457.
  • 7Asha A S, Sebastian M T, Jayaraj M K. Structural and electrical properties of La0.5 Sr0.5 CoO3 thin films prepared by RF-magnetron sputtering[J]. Journal of Alloys and Compounds, 2008, 449(1): 68-72.
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  • 10Y Liao,et al.Low-cost and reliable thin film encapsulation for oraganic light emitting diodes using magnesium fluoride and zinc sulfide[J].Thin Solid Films 2011,519:2344-2348.

引证文献3

华中科技大学学报（自然科学版）
2008年 第8期

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