摘要
在共轭梯度近似下,采用基于密度泛函理论的第一性原理方法,对Mn、Fe掺杂尖晶石半导体GeSi2N4的电子结构和磁性进行了计算.结果表明Mn和Fe掺杂尖晶石半导体GeSi2N4都呈现出半金属铁磁性,晶胞的总磁矩分别为3.0和4.0μB.另外,在Mn搀杂GeSi2N4中,最近邻N原子被Mn原子反铁磁极化,而在Fe搀杂GeSi2N4中,最近邻N原子却被Fe原子铁磁极化.
The electronic structure and magnetic properties of Mn-and Fe-doped spinel GeSi2N4 semiconductors have been calculated by using the first-principles method based on the density functional theory within the generalized gradient approximation for the exchange-correlation potential. The results show that Mn-and Fe-doped spinel GeSi2N4 exhibit half-metallic ferromagnetism with a total magnetic moment of 3.0 and 4, 0 μB per supercell, respectively, The induced magnetic polarization of the nearest N atom is antiparallel to that of Mn atom in Mn-doped GeSi2N4, whereas parallel magnetic polarization is found at the nearest N site of Fe atom in Fe-doped GeSi2N4.
出处
《西南大学学报(自然科学版)》
CAS
CSCD
北大核心
2008年第7期184-188,共5页
Journal of Southwest University(Natural Science Edition)
基金
西南大学发展基金资助项目(SWU20710411)~~
关键词
半金属
稀磁半导体
第一性原理计算
half-metal
diluted magnetic semiconductor
first-principles calculation