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一类新型半金属铁磁半导体的第一性原理研究(英文) 被引量:2

First-Principles Study of a New Class of Half-Metallic Ferromagnetic Semiconductors
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摘要 在共轭梯度近似下,采用基于密度泛函理论的第一性原理方法,对Mn、Fe掺杂尖晶石半导体GeSi2N4的电子结构和磁性进行了计算.结果表明Mn和Fe掺杂尖晶石半导体GeSi2N4都呈现出半金属铁磁性,晶胞的总磁矩分别为3.0和4.0μB.另外,在Mn搀杂GeSi2N4中,最近邻N原子被Mn原子反铁磁极化,而在Fe搀杂GeSi2N4中,最近邻N原子却被Fe原子铁磁极化. The electronic structure and magnetic properties of Mn-and Fe-doped spinel GeSi2N4 semiconductors have been calculated by using the first-principles method based on the density functional theory within the generalized gradient approximation for the exchange-correlation potential. The results show that Mn-and Fe-doped spinel GeSi2N4 exhibit half-metallic ferromagnetism with a total magnetic moment of 3.0 and 4, 0 μB per supercell, respectively, The induced magnetic polarization of the nearest N atom is antiparallel to that of Mn atom in Mn-doped GeSi2N4, whereas parallel magnetic polarization is found at the nearest N site of Fe atom in Fe-doped GeSi2N4.
出处 《西南大学学报(自然科学版)》 CAS CSCD 北大核心 2008年第7期184-188,共5页 Journal of Southwest University(Natural Science Edition)
基金 西南大学发展基金资助项目(SWU20710411)~~
关键词 半金属 稀磁半导体 第一性原理计算 half-metal diluted magnetic semiconductor first-principles calculation
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参考文献16

  • 1[1]De Groot g A,Mueller F M,Van Engen P G,et al.New Class of Materials:Half-Metallic Ferromagnets[J].Phys Rev Lett,1983,50:2024-2027.
  • 2[2]Lewis S P,Allen P B,Sasaki T.Band Structure and Transport Properties of CrO2[J].Phys Rev B,1997,55:10253-10260.
  • 3[3]Liu B G.Robust Half-Metallic Ferromagnetism in Zinc-Blende CrSb[J].Phys Rev B,2003,67:172411-172414.
  • 4[4]Xu Y Q,Liu B G,Pettifor D G.Half-Metallic Ferromagnetism of MnBi in the Zinc-Blende Structure[J].Phys Rev B,2002,66:184435-184439.
  • 5[5]Xie W H,Xu Y Q,Liu B G,et al.Half-Metallic Ferromagnetism and Structural Stability of Zincblende Phases of the Transition-Metal Chalcogenides[J].Phys Rev Lett,2003,91:037204-037207.
  • 6[6]Shi L J,Liu B G.Half-Metallic Ferromagnetism in Hexagonal MAl7N5 and MAl3N4(M= Cr and Mn) from First Principles[J].Phys Rev B,2007,76:115201-115209.
  • 7[7]Yao K L,Gao G Y,Liu Z L,et al.Half-Metallic Ferromagnetic Semiconductors of V-and Cr-Doped CdTe Studied from First-Principles Pseudopotential Calculations[J].Physics B,2005,366:62-66.
  • 8[9]Zhao Y J,Freeman A J.First-Principles Prediction of a New Class of Ferromagnetic Semiconductors[J].J Magn Magn Mater,2002,246:145-150.
  • 9[9]Dong J J,Deslippe J,Sankey O F,et al.Theoretical Study of the Ternary Spinel Nitride System Si3N4-Ge3N4[J].Phys Rev B,2003,67.094104-094111.
  • 10[10]Soignard E,Somayazulu M,Mao H K,et al.High Pressure-High Temperature Investigation of the Stability of Nitride Spinels in the System Si2N4-Ge3N4[J].Solid State Commun,2001,120:237-242.

二级参考文献11

  • 1[1]LI X H,CARLESSON J,JOHANSSON M,et al.Silicon Heterojunction Bipolar Power Transistor with an Amorphous Si:B Alloy Emitter[J].Appl Phys Lett,1992,61:1316-1318.
  • 2[2]HUANG M,FENG Y P,LIMA T L.Structural and Electronic Properties of Si3P4[J].Phys Rev B,2004,69:54112-54118.
  • 3[3]MO S D,OUYANG L,CHING W Y.Interesting Physical Properties of the New Spinel Phase of Si3N4 and C3N4[J].Phys Rev Lett,1999,83:5046-5049.
  • 4[4]DONG J,SANKEY O F,DEB S K,et al.Theoretical Study of β-Ge3N4 and its High-Pressure Spinel γ Phase[J].Phys Rev B,2000,61:11979-11992.
  • 5[5]LOWTHER J E.High-Pressure Phases and Structural Bonding of Ge3N4[J].Phys Rev B,2000,62:5-8.
  • 6[6]CHING W Y,Mo S D,Ouyang L,et al.Prediction of the New Spinel Phase of Ti3N4 and SiTi2N4 and the Metal-Insulator Transition[J].Phys Rev B,2000,61:10609 -10614.
  • 7[7]CHING W Y,MO S D,Tanaka I,et al.Prediction of Spinel Structure and Properties of Single and Double Nitrides[J].Phys Rev B,2001,63:64102-64106.
  • 8[8]CHING W Y,MO S D,Ouyang L.Electronic and Optical Properties of the Cubic Spinel Phase of c-Si3N4,c-Ge3N4,c-SiGe2N4,and c-GeSi2N4[J].Phys Rev B,2001,63:245110-245117.
  • 9[9]SOIGNARD E,SOMAYAZULU M,MAO H K,et al.High Pressure-High Temperature Investigation of the Stability of Nitride Spinels in the Systems Si3N4-Ge3N4[J].Solid State Commun,2001,120:237 -242.
  • 10[10]DONG J,DESLIPPE J,SANKEY O F,et al.Theoretical Study of the Ternary Spinel Nitride System Si3N4-Ge3N4[J].Phys Rev B,2003,67:94104-94111.

共引文献1

同被引文献35

  • 1周清,张俊峰,陈洪.V,Cr掺杂CdSe铁磁半导体的电子能态密度和半金属性质研究[J].西南师范大学学报(自然科学版),2006,31(6):68-71. 被引量:4
  • 2Galanakis I, Dederichs P H. Slater-Pauling Behavior and Origin of the Half-Metallicity of the Full-Heusler Alloys[J]. Phys Rev B, 2002, 66:174429 -- 1 -- 174429 -- 9.
  • 3Galanakis I, Dederichs P H. Origin and Properties of the Gap in the Half-Ferromagnetic Heusler Alloys [J]. Phys Rev B, 2002, 66: 134428--1--134428--9.
  • 4de Groot R A, Mueller F M, van Engen P G, et al. New Class of Materials: Half-Metallic Ferromagnets[J].Phys Rev Lett, 1983, 50: 2024--2027.
  • 5Sasloglu E, Sandratskii L M, Bruno P. Exchange Interactions and Temperature Dependence of Magnetization in Half- Metallic Heusler Alloys [J]. Phys Rev B, 2005, 72: 184415 -- 1 -- 184415 -- 11.
  • 6Picozzi S, Continenza A. Role of Structural Defects on the Half-Metallic Character of Co2MnGe and Co2MnSi Heusler Alloys [J]. Phys Rev B, 2004, 69:094423 -- 1 -- 094423 -- 7.
  • 7Karthik S V, Rajanikanth A, Takahashi Y K, et al. Microstructure and Spin Polarization of Quaternary Co2Cr1-xVxAl, Co2V1-xFexAl and Co2Cr1-xFexAl Heusler Alloys [J]. Acta Materialia, 2007, 55: 3867- 3874.
  • 8Janusz Tobola, Jacques Pierre. Electronic Phase Diagram of the XTZ (X=Fe, Co, Ni;T=Ti, V, Zr, Nb, Mn; Z=Sn, Sb) Semi-Heusler Compounds [J]. Journal of Alloys and Compounds, 2000, 296.. 243 - 252.
  • 9Li Shandong, Liu Meimei, Yuan Zuanru, et al. Effect of Nb Addition on the Magnetic Properties and Magnetocaloric Effect of CoMnSb Alloy [J]. Journal of Alloys and Compounds, 2007, 427:15 - 17.
  • 10John P Perdew, Kieron Burke, Matthias Ernzerhof. Generalized Gradient Approximation Made Simple [J]. Phys Rev Lett, 1996, 77: 3865--3868.

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