808nm半导体激光器的腔面反射率设计

Design of Cavity Facet Reflectivity for 808nm Semiconductor Lasers

通过对不同腔长的808nm半导体激光器单管进行P-I测试,提取出了材料内部参数,如内量子效率、内损耗、透明电流密度、模式增益等。根据得出的内部参数进行了腔面反射率设计,分析腔面反射率与功率转换效率的关系,得出了关系曲线。进行腔面镀膜实验,把实验值与计算值相比较,二者相吻合。通过这种腔面反射率设计方法,可以得到半导体激光器的最大功率转换效率,从而使其工作于优化状态下。

Material internal parameters, such as internal quantum efficiency, internal loss, transparent current density mode gain and so on, were obtained by P-I test for different cavity length 808nm semiconductor laser diodes. The relation between cavity facet reflectivity and power conversion efficiency was analyzed, and the relation curves were acquired by the design of cavity facet reflectivity according to these internal parameters. Then, we did cavity facet coating experiments. Experimental results are well consisted with the theoretical prediction through comparison. The maximal power conversion efficiency can be achieved through the design of cavity facet reflectivity, and the semiconductor laser diodes can work in an optimal condition.