摘要
在晶体管网络直流分析的理论基础上,微分负阻器件的电路合成法实现理论的系统研究在八十年代取得了重大进展。但是,上述工作都只针对电路中仅含两只晶体管的情形。这类电路中所含电阻较多,阻值偏大,电阻与电阻间的阻值偏离甚多。若从实用考虑,将这类器件集成为单片形式,则不论从提高负阻器件的高频特性或从集成工艺考虑,都应尽量减少电阻数目和电阻值。针对上述问题,本文探讨了多管负阻器件的实现。第一部分论证了多管网络呈现微分负阻特性的充分条件,以定理1.1的形式给出。第二部分中给出了多管微分负阻双口的四个实现定理和一个统一算法。
A series of papers on synthesis of NDR (negative differential resistance) devices containing two transistors have been reported during the last decade. However, these circuits involve relatively more resistors with large resistances, and are unfavorable for their high-frequency characteristics and for integration technique considerations. In view of this situation, the theorems of realizing multi-transistor NDR devices arc discussed in this paper. The sufficient conditions for a multi-transistor circuit to have NDR characteristics are given in Thm2.1. Four theorems and a unified algorithm for realizing multitransistor NDR two-ports are presented.
