GaN肖特基器件电学性质的模拟研究

Numerical Modeling of Electric Characteristics of GaN-based Schottky Device

基于二维数值模型对GaN肖特基器件进行模拟计算,主要研究M IS结构的肖特基器件的界面层和本征漂移层对肖特基器件电学性质(电场强度分布和不同结构的I-V特性等)的影响。模拟结果显示M IS结构的肖特基器件中的界面层主要影响器件的电流特性以及开启电压,提高自身的电场强度,降低暗电流,而本征漂移层则主要影响器件的电场强度分布,对器件的正向电流有比较明显的影响。通过器件模拟可以在一定程度上优化器件结构,提高器件性能。

The performance of GaN-based Schottky device was simulated numerically based on a two-dimensional model, which focused on the effect of interface layer and bulk layer to electric characteristics, i. e. distribution of strength of electric field and current-voltage characteristic of different MIS Schottky devices. The results indicated that the interface layer mainly affects the current characteristic of device and turn-on voltage, improves the strength of electric field and reduces the dark current, and the bulk layer mainly affects the distribution of electric field and the forward current of device. We can optimize the fabric and improve the performance of devices.