摘要
采用动电位扫描、循环伏安以及电化学交流阻抗等方法研究了铜钴纳米多层膜的电沉积机理.结果表明:在所研究的体系中,铜的沉积是扩散控制的可逆电极过程,而钴的沉积是首先形成Co(OH)ads的吸附中间产物,而后在电极上进一步还原为原子态.基于研究结果,提出了铜钴沉积的机制.
The mechanism of electrodeposition of Cu/Co multilayer thin films has been studied by means of potentodynamic sweep, cyclic voltammetry sweep and AC impendance. The results indicated that the copper deposition is mass transfer controlled process and the cobalt deposition is related to the absorbed intermediate species such as Co(OH)ads. The cobalt ions first form Co(OH)ads, then was deoxygenated to cobalt on the electrode surface.
出处
《电化学》
CAS
CSCD
1997年第4期401-407,共7页
Journal of Electrochemistry
基金
新金属材料国家重点实验室
冶金部腐蚀与磨损开放研究室资助
关键词
铜钴合金
纳米多层膜
电沉积
铜钴钠米多层膜
Coppercobalt alloy, Multilayer films, Electrodeposition, AC impendance